? 2003 ixys all rights reserved 1 - 4 ixys reserves the right to change limits, test conditions and dimensions. vdi 75-12p1 vii 75-12p1 vid 75-12p1 vio 75-12p1 303 b3 i c25 = 92 a v ces = 1200 v v ce(sat) typ. = 2.7 v igbts symbol conditions maximum ratings v ces t vj = 25c to 150c 1200 v v ges 20 v i c25 t c = 25c 92 a i c80 t c = 80c 62 a i cm v ge = 15 v; r g = 22 ? ; t vj = 125c 100 a v cek rbsoa, clamped inductive load; l = 100 h v ces t sc v ce = v ces ; v ge = 15 v; r g = 22 ? ; t vj = 125c 10 s (scsoa) non-repetitive p tot t c = 25c 379 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 75 a; v ge = 15 v; t vj = 25c 2.7 3.2 v t vj = 125c 3.0 v v ge(th) i c = 2 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ;v ge = 0 v; t vj = 25c 3.7 ma t vj = 125c 12.5 ma i ges v ce = 0 v; v ge = 20 v 200 na t d(on) 100 ns t r 70 ns t d(off) 500 ns t f 70 ns e on 9.1 mj e off 6.7 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 3.3 nf r thjc (per igbt) 0.33 k/w r thjh with heatsink compound (0.42 k/m.k; 50 m) 0.66 k/w inductive load, t vj = 125c v ce = 600 v; i c = 60 a v ge = 15/0 v; r g = 22 ? igbt modules in eco-pac 2 short circuit soa capability square rbsoa preliminary data sheet pin arangement see outlines vii op9 gh10 vx18 l9 e2 k10 x16 x13 x15 ntc vio ijk lmn a vdi x15 x16 ntc ac1 ps18 ik10 l9 t16 vid ik10 sv18 ac1 l9 f1 x15 x16 ntc features npt igbt's - positive temperature coefficient of saturation voltage - fast switching fred diodes - fast reverse recovery - low forward voltage industry standard package - solderable pins for pcb mounting - isolated dcb ceramic base plate advantages space and weight savings reduced protection circuits leads with expansion bend for stress relief typical applications ac and dc motor control ac servo and robot drives power supplies welding inverters s
? 2003 ixys all rights reserved 2 - 4 ixys reserves the right to change limits, test conditions and dimensions. vdi 75-12p1 vii 75-12p1 vid 75-12p1 vio 75-12p1 303 b3 reverse diodes (fred) symbol conditions maximum ratings i f25 t c = 25c 103 a i f80 t c = 80c 65 a symbol conditions characteristic values min. typ. max. v f i f = 60 a; t vj = 25c 2.28 2.6 v t vj = 125c 1.67 v i rm i f = 60 a; di f /dt = 500 a/s; t vj = 125c 41 a t rr v r = 600 v; v ge = 0 v 200 ns r thjc 0.66 k/w r thjh with heatsink compound (0.42 k/m.k; 50 m) 1.32 k/w module symbol conditions maximum ratings t vj -40...+150 c t stg -40...+150 c v isol i isol 1 ma; 50/60 hz 3000 v~ m d mounting torque (m4) 1.5 - 2.0 nm 14 - 18 lb.in. a max. allowable acceleration 50 m/s 2 symbol conditions characteristic values min. typ. max. d s creepage distance on surface (pin to heatsink) 11.2 mm d a strike distance in air (pin to heatsink) 11.2 mm weight 24 g vid vio temperature sensor ntc symbol conditions characteristic values min. typ. max. r 25 t = 25c 4.75 5.0 5.25 k ? b 25/50 3375 k data according to iec 60747 and refer to a single transistor or diode unless otherwise stated. vdi
? 2003 ixys all rights reserved 3 - 4 ixys reserves the right to change limits, test conditions and dimensions. vdi 75-12p1 vii 75-12p1 vid 75-12p1 vio 75-12p1 303 b3 fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. forward characteristics of free wheeling diode fig. 5 typ. turn on gate charge fig. 6 typ. turn off characteristics of free wheeling diode 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0 30 60 90 120 150 180 0 200 400 600 800 1000 0 40 80 120 0 100 200 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 0 20 40 60 80 100 120 0 50 100 150 200 250 0 5 10 15 20 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0 20 40 60 80 100 120 13 v 11 v t j = 25c v ge =17 v t j = 125c 15 v 567891011 0 20 40 60 80 100 120 13 v 11 v v ge =17 v 15 v v ce = 20 v t j = 25c 9 v 9 v v ce v a i c v ce a i c v v v v ge v f a i c a i f nc q g -di/dt v v ge a i rm t rr ns a/ s t j = 125c v r = 600 v i f = 50 a t j = 25c i rm t rr 81t120 81t120 81t120 81t120 81t120 v ce = 600 v i c = 50 a t j = 125c dwlp55-12
? 2003 ixys all rights reserved 4 - 4 ixys reserves the right to change limits, test conditions and dimensions. vdi 75-12p1 vii 75-12p1 vid 75-12p1 vio 75-12p1 303 b3 fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus collector current times versus collector current fig. 9 typ. turn on energy and switching fig. 10 typ. turn off energy and switching times versus gate resistor times versus gate resistor fig. 11 reverse biased safe operating area fig. 12 typ. transient thermal impedance rbsoa 0 20406080100 0 6 12 18 24 0 30 60 90 120 0 20406080100 0 2 4 6 8 10 12 0 100 200 300 400 500 600 0,00001 0,0001 0,001 0,01 0,1 1 0,00001 0,0001 0,001 0,01 0,1 1 0 102030405060708090100 0 2 4 6 8 10 0 300 600 900 1200 1500 0 102030405060708090100 0 5 10 15 20 0 60 120 180 240 single pulse v ce = 600 v v ge = 15 v i c = 50 a t j = 125c 0 200 400 600 800 1000 1200 0 20 40 60 80 100 120 r g = 22 ? t j = 125c v cek < v ces e on t d(on) t r e off t d(off) t f e on t d(on) t r e off t d(off) t f i c a i c a mj e off mj e on ns t ns t r g ? r g ? v ce t s mj e on mj e off ns t ns t i cm k/w z thjc igbt diode a v 81t120 81t120 81t120 81t120 81t120 v ce = 600 v v ge = 15 v r g = 22 ? t j = 125c v ce = 600 v v ge = 15 v r g = 22 ? t j = 125c v ce = 600 v v ge = 15 v i c = 50 a t j = 125c vid...75-12p1
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